Bychkov-Rashba Effect and g-Factor Tuning in Modulation Doped SiGe Quantum Wells

H. Malissa; W. Jantsch; M. Mühlberger; F. Schäffler; Z. Wilamowski; M. Draxler; P. Bauer

doi:10.12693/APhysPolA.105.585

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Acta Physica Polonica A

2004 | 105 | 6 | 585-590

Article title

Bychkov-Rashba Effect and g-Factor Tuning in Modulation Doped SiGe Quantum Wells

Authors

H. Malissa , W. Jantsch , M. Mühlberger , F. Schäffler , Z. Wilamowski , M. Draxler , P. Bauer

Content

http://przyrbwn.icm.edu.pl/APP/PDF/105/a105z608.pdf [remote]

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Abstracts

We investigate the spin resonance of electrons in one-sided modulation doped Si_{1-x}Ge_x (x=0-10%)) quantum wells defined by Si_{0.75}Ge_{0.25} barriers. In such structures, the Bychkov-Rashba effect induces an effective magnetic field in the quantum well layer which causes anisotropy of both the g-factor and the spin coherence time. Evaluation of the Rashba coefficient as a function of x yields a monotonic increase. For x=5% the shift in the resonance field exceeds the ESR linewidth already, demonstrating the possibility to use this effect for g-factor tuning to select individual spins in an ensemble.

Keywords

73.21.Fg 85.75.-d

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

2004

Volume

105

Issue

Pages

585-590

Physical description

Dates

published

2004-06

received

2004-05-28

References

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Document Type

Publication order reference

YADDA identifier

bwmeta1.element.bwnjournal-article-appv105n608kz

Identifiers

DOI

10.12693/APhysPolA.105.585