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2004 | 105 | 6 | 585-590
Article title

Bychkov-Rashba Effect and g-Factor Tuning in Modulation Doped SiGe Quantum Wells

Content
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Languages of publication
EN
Abstracts
EN
We investigate the spin resonance of electrons in one-sided modulation doped Si_{1-x}Ge_x (x=0-10%)) quantum wells defined by Si_{0.75}Ge_{0.25} barriers. In such structures, the Bychkov-Rashba effect induces an effective magnetic field in the quantum well layer which causes anisotropy of both the g-factor and the spin coherence time. Evaluation of the Rashba coefficient as a function of x yields a monotonic increase. For x=5% the shift in the resonance field exceeds the ESR linewidth already, demonstrating the possibility to use this effect for g-factor tuning to select individual spins in an ensemble.
Keywords
EN
Publisher

Year
Volume
105
Issue
6
Pages
585-590
Physical description
Dates
published
2004-06
received
2004-05-28
Contributors
author
  • Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität, 4040 Linz, Austria
author
  • Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität, 4040 Linz, Austria
  • Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität, 4040 Linz, Austria
author
  • Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität, 4040 Linz, Austria
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz, Austria
author
  • Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz, Austria
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv105n608kz
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