Localization of Excitons in the Wetting Layer Accompanying Self-Assembled InAs/GaAs Quantum Dots

• Authors: A. Babinski , S. Raymond , Z. Wasilewski , J. Lapointe , A. Potemski
• Languages of publication: EN

Abstracts

EN

A wetting layer is a narrow, highly strained quantum well, which accompanies quantum dots grown in Stranski-Krastanow mode. Its importance for a full description of the quantum dots properties has recently been pointed out. It has been shown for example that excitons can be localized by potential fluctuations in the wetting layer. This is equivalent to the formation of "natural" quantum dots in the WL. Excitonic emission from the single dots formed in the wetting layer accompanying the InAs/GaAs self-assembled quantum dots has been investigated in a high magnetic field (up to 23 T). Quadruplet splitting of the investigated emission line has been observed. The attribution of the emission line to the recombination of negatively charged exciton is discussed.

Keywords

EN

71.35.Pq; 71.35.Ji; 71.70.Ej

Discipline

• 71.35.Ji: Excitons in magnetic fields; magnetoexcitons
• 71.35.Pq: Charged excitons (trions)
• 71.70.Ej: Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 105
• Issue: 6
• Pages: 547-552

Dates

published

2004-06

received

2004-05-28

Contributors

author

A. Babinski

• Grenoble High Magnetic Field Laboratory, MPIFKF and CNRS, 38042 Grenoble, France
• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

S. Raymond

• Institute for Microstructural Sciences, NRC Canada, Ottawa, Canada

author

Z. Wasilewski

• Institute for Microstructural Sciences, NRC Canada, Ottawa, Canada

author

J. Lapointe

• Institute for Microstructural Sciences, NRC Canada, Ottawa, Canada

author

A. Potemski

• Grenoble High Magnetic Field Laboratory, MPIFKF and CNRS, 38042 Grenoble, France

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Identifiers

DOI

10.12693/APhysPolA.105.547