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2004 | 105 | 6 | 547-552
Article title

Localization of Excitons in the Wetting Layer Accompanying Self-Assembled InAs/GaAs Quantum Dots

Content
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Languages of publication
EN
Abstracts
EN
A wetting layer is a narrow, highly strained quantum well, which accompanies quantum dots grown in Stranski-Krastanow mode. Its importance for a full description of the quantum dots properties has recently been pointed out. It has been shown for example that excitons can be localized by potential fluctuations in the wetting layer. This is equivalent to the formation of "natural" quantum dots in the WL. Excitonic emission from the single dots formed in the wetting layer accompanying the InAs/GaAs self-assembled quantum dots has been investigated in a high magnetic field (up to 23 T). Quadruplet splitting of the investigated emission line has been observed. The attribution of the emission line to the recombination of negatively charged exciton is discussed.
Keywords
EN
Year
Volume
105
Issue
6
Pages
547-552
Physical description
Dates
published
2004-06
received
2004-05-28
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv105n606kz
Identifiers
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