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2004 | 105 | 6 | 517-521
Article title

Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots

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Abstracts
EN
We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
Keywords
Publisher

Year
Volume
105
Issue
6
Pages
517-521
Physical description
Dates
published
2004-06
received
2004-05-28
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Warsaw, Poland
  • Institute of Experimental Physics, Warsaw University, Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Warsaw, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv105n604kz
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