Anisotropic Transport of Electrons in ZnS

• Authors: Zheng Xu
• Languages of publication: EN

Abstracts

EN

We study the anisotropic electronic transport property of ZnS-type thin-film electroluminescence displays by Monte Carlo simulation. The simulation contains an accurate and efficient description of the anisotropic band structure and various scattering mechanisms like phonon scattering and impurity scattering. The electronic transport processes in three devices with different ZnS-layer orientations are simulated. From the obtained energy population and average energy of electrons, we conclude that the 〈100〉 direction is the best for electron acceleration under high electric field. We propose that new attempts in using this direction for ZnS-layer deposition will result in an improvement of the performance of thin-film electroluminescence displays.

Keywords

EN

78.60.Fi

Discipline

• 78.60.Fi: Electroluminescence

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 105
• Issue: 4
• Pages: 383-388

Dates

published

2004-04

received

2003-11-18

Contributors

author

Zheng Xu

• Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 10044, China
• Postdoctoral Working Station of Zhong-Huang San-Jin Ltd., District of Economy and Technology Development, Tianjin, China

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Identifiers

DOI

10.12693/APhysPolA.105.383