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2004 | 105 | 4 | 383-388
Article title

Anisotropic Transport of Electrons in ZnS

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Content
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Languages of publication
EN
Abstracts
EN
We study the anisotropic electronic transport property of ZnS-type thin-film electroluminescence displays by Monte Carlo simulation. The simulation contains an accurate and efficient description of the anisotropic band structure and various scattering mechanisms like phonon scattering and impurity scattering. The electronic transport processes in three devices with different ZnS-layer orientations are simulated. From the obtained energy population and average energy of electrons, we conclude that the 〈100〉 direction is the best for electron acceleration under high electric field. We propose that new attempts in using this direction for ZnS-layer deposition will result in an improvement of the performance of thin-film electroluminescence displays.
Keywords
EN
Year
Volume
105
Issue
4
Pages
383-388
Physical description
Dates
published
2004-04
received
2003-11-18
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv105n403kz
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