Phase Separation and Microwave Response of Epitaxial and Polycrystalline Manganite Films

• Authors: S. Ašmontas , A. Abrutis , J. Gradauskas , A. Lučun , A. Oginskis , V. Plaušinaitienė , A. Sužiedėlis , B. Vengalis
• Languages of publication: EN

Abstracts

EN

The resistance, magnetoresistance, and resistance response under microwave irradiation (f=10 and 35 GHz) were measured for epitaxial and polycrystalline La_{0.67}Ca_{0.33}MnO_3 and La_{0.67}Sr_{0.33}MnO_3 thin films in the temperature range 78÷300 K. The microwave induced resistance increase observed for the epitaxial films in a narrow temperature range below the ferromagnetic to paramagnetic transition temperature T_c certifies coexistence of low resistance (ferromagnetic) and high resistance (paramagnetic) regions in the manganites. Resistance of polycrystalline films decreased under microwave irradiation in a wide temperature range below T_c. The effect was explained in terms of microwave assisted hopping of carriers in high resistance regions formed at grain boundaries of the polycrystalline films.

Keywords

EN

75.47.Gk; 75.47.Lx; 07.57.Kp

Discipline

• 07.57.Kp: Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors(see also 85.60.Gz Photodetectors in electronic and magnetic devices, and 95.55.Rg Photoconductors and bolometers in astronomy)
• 75.47.Gk: Colossal magnetoresistance
• 75.47.Lx: Magnetic oxides

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 105
• Issue: 1-2
• Pages: 141-147

Dates

published

2004-01/02

received

2003-09-15

Contributors

author

S. Ašmontas

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
• KTU Panevėžys Institute, Klaipėdos 3, 5319 Panevėžys, Lithuania

author

A. Abrutis

• Department of General and Inorganic Chemistry, Vilnius University, Naugarduko 24, 2006 Vilnius, Lithuania

author

J. Gradauskas

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius
• Vilnius Gediminas Technical University, Saulėtekio al. 11, 2040 Vilnius, Lithuania

author

A. Lučun

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

author

A. Oginskis

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

author

V. Plaušinaitienė

• Department of General and Inorganic Chemistry, Vilnius University, Naugarduko 24, 2006 Vilnius, Lithuania
• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius

author

A. Sužiedėlis

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius
• Vilnius Gediminas Technical University, Saulėtekio al. 11, 2040 Vilnius, Lithuania

author

B. Vengalis

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius
• Vilnius Gediminas Technical University, Saulėtekio al. 11, 2040 Vilnius, Lithuania

References

• 1. G.H. Jonker, J.H. van Santen, Physica, 16, 337, 1950
• 2. R. von Helmholt, J. Wecker, B. Holzapfel, L. Schultz, K. Samwer, Phys. Rev. Lett., 71, 2331, 1993
• 3. S. Jin, T.H. Tiefel, M. McCormak, R.A. Fastnacht, R. Ramesh, L.H. Chen, Science, 264, 413, 1994
• 4. A. Moreo, S. Yunoki, E. Dagotto, Science, 283, 2034, 1999
• 5. R.W. Li, Z.R. Zhang, Q.A. Li, J.R. Sun, G.J. Wang, Z.H. Cheng, Z.H. Wang, S.Y. Zhang, B.S. Han, B.G. Shen, J. Appl. Phys., 92, 7404, 2002
• 6. A. Lisauskas, A. Sužiedėlis, A. Lučun, A. Oginskis, J. Gradauskas, B. Vengalis, S. Ašmontas, Lith. J. Phys., 42, 331, 2002
• 7. A. Lisauskas, A. Sužiedėlis, A. Lučun, A. Oginskis, J. Gradauskas, B. Vengalis, S. Ašmontas, Solid State Phenom., 94, 257, 2003
• 8. A. Abrutis, V. Kubilius, V. Bigelytė, A. Teišerskis, Z. Šaltytė, J.P. Senateur, F. Weiss, Mater. Lett., 31, 201, 1997

Identifiers

DOI

10.12693/APhysPolA.105.141