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2003 | 104 | 5 | 459-467
Article title

Nonlinear Diffusion in Excited HgCdTe and Si Crystals

Content
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EN
Abstracts
EN
We discuss the properties of the nonlinear diffusion equation for the case of diffusion in excited systems. The diffusion coefficient is directly proportional to the concentration of impurities and depends on time in a special way. For the description of the excited systems, we used a special temperature function, which defined the time dependent diffusion coefficient and the Boltzmann distribution of the excited vacancies or impurity atoms in solids. This model was used for the approximation of indium concentration profiles in HgCdTe of a rapid diffusion component and very fast diffusion of metastable vacancies irradiated by soft X-rays in an excited Si crystal.
Keywords
EN
Publisher

Year
Volume
104
Issue
5
Pages
459-467
Physical description
Dates
published
2003-11
received
2003-07-11
Contributors
  • Department of Physics and Mathematics, Šiauliai University, Višinskio 25, 5400, Šiauliai, Lithuania
author
  • Department of Physics and Mathematics, Šiauliai University, Višinskio 25, 5400, Šiauliai, Lithuania
author
  • Faculty of Physics, Vilnius University, Saulėtekio 9, 2040 Vilnius, Lithuania
References
  • 1. A.J. Janavičius, Phys. Lett. A, 224, 159, 1997
  • 2. A.J. Janavičius, Acta Phys. Pol. A, 93, 505, 1998
  • 3. A.J. Janavičius, Ž. Norgėla, D. Jurgaitis, Math. Model. Anal., 6, 77, 2001
  • 4. Seung-Man Park, Jae Mook Kim, Hee Chul Lee, Choong-Ki Kim, J. Appl. Phys., 35, 1554, 1996
  • 5. R. Purlys, A.J. Janavičius, A. Mekys, S. Balakauskas, J. Storasta, Lith. J. Phys., 41, 376, 2001
  • 6. J. Marciak-Kozlowska, Z. Mucha, Lith. J. Phys., 35, 616, 1995 (in Russian)
  • 7. B.N. Mukashev, X.A. Abdulin, Yu.V. Gorelinski, Adv. Phys. Sci., 170, 143, 2000 (in Russian)
  • 8. A.J. Janavičius, Acta Phys. Pol. A, 93, 731, 1998
  • 9. A.J. Janavičius, J. Banys, R. Purlys, S. Balakauskas, Lith. J. Phys., 42, 337, 2002
  • 10. V.S. Vavilov, A.E. Kiv, O.R. Nijazova, Mechanism of Producing and Migration of Defects in Semiconductors, Science, Moscow 1981, p. 368
  • 11. J.A. Van Vechten, Phys. Rev. B, 10, 1482, 1974
  • 12. G.D. Watkins, Mater. Sci. Semicond. Proc., 3, 227, 2000
  • 13. I.P. Stepanenko, Foundations of Microelectronics, Soviet radio, Moscow 1980, p. 424 (in Russian)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv104n507kz
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