Influence of the Interorbital Interference on the Electron Tunneling in Scanning Tunneling Microscopy

• Authors: L. Jurczyszyn
• Languages of publication: EN

Abstracts

EN

This article presents theoretical study of the influence of the interorbital interference on the electron tunneling in scanning tunneling microscopy. Detailed analysis shows that this kind of interference may modify significantly the tunneling current by the increase or decrease in the current contributions flowing through different orbitals of the surface atoms. This factor might cause the differences between the height and kind of scanning tunneling microscopy corrugation at different metal surfaces. This also might be a source of the unexpectedly high corrugation obtained from scanning tunneling microscopy measurements performed for some metal surfaces, which cannot be explained by the charge distribution along the substrate surface. The effects connected with the interorbital interference will be discussed in the context of the scanning tunneling microscopy simulations performed for Ni_3Al (111) and (001) surfaces.

Keywords

EN

68.37.Ef; 73.20.-r; 73.40.Gk

Discipline

• 73.20.-r: Electron states at surfaces and interfaces
• 68.37.Ef: Scanning tunneling microscopy (including chemistry induced with STM)
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2003
• Volume: 104
• Issue: 3-4
• Pages: 217-230

Dates

published

2003-09/10

received

2003-07-16

Contributors

author

L. Jurczyszyn

• Institute of Experimental Physics, University of Wrocław, pl. Maksa Borna 9, 50-204 Wrocław, Poland

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Identifiers

DOI

10.12693/APhysPolA.104.217