Low-Temperature Scanning Tunneling Spectroscopy of Semiconductor Surfaces

• Authors: R. Feenstra , G. Meyer , F. Moresco , K. Rieder
• Languages of publication: EN

Abstracts

EN

Low-temperature scanning tunneling spectroscopy measurements on semiconductor surface are described. We consider both surfaces which do not possess surface states within the bulk bandgap, such as GaAs(110), and surfaces which do have states within the gap, such as Ge(111) 2×1 and Ge(111)c(2×8). Band bending in the semiconductor due to the electric field in the vacuum penetrating the semiconductor is found to be a substantial effect in the former case. Transport limitations in the semiconductor give rise to additional voltage drops, which can be observed by making measurements over a wide range of tunnel current magnitudes.

Keywords

EN

73.20.Hb; 71.20.Nr; 68.37.Ef

Discipline

• 73.20.Hb: Impurity and defect levels; energy states of adsorbed species
• 68.37.Ef: Scanning tunneling microscopy (including chemistry induced with STM)
• 71.20.Nr: Semiconductor compounds

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2003
• Volume: 104
• Issue: 3-4
• Pages: 205-216

Dates

published

2003-09/10

received

2003-07-16

Contributors

author

R. Feenstra

• Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA

author

G. Meyer

• Paul Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

author

F. Moresco

• Experimentalphysik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany

author

K. Rieder

• Experimentalphysik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany

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Identifiers

DOI

10.12693/APhysPolA.104.205