STM/STS Studies of the Structural Phase Transition in the Growth of Ultra-Thin Bi Films on Si(111)

• Authors: J. Sadowski , T. Nagao , M. Saito , A. Oreshkin , S. Yaginuma , S. Hasegawa , T. Ohno , T. Sakurai
• Languages of publication: EN

Abstracts

EN

Growth of thin metal films on semiconductors has been always an important subject for extensive experimental and theoretical studies. As the applicability of well-ordered nanostructures in electronic applications depends strongly on their size and distribution, it is necessary to understand the processes that govern the growth of such structures. In this paper we present the results of investigation of the room temperature growth of thin Bi film on Si(111). In our study we clarified that rotationally disordered, pseudo-cubic Bi(012) islands with uniform height of ≈13Å are formed in the initial stage of Bi film growth. With increase in the amount of bismuth on the surface, islands interconnect maintaining however their uniform height. This process is further accompanied by the unique and unexpected structural phase transition of the Bi(012) film into a hexagonal Bi(001) film.

Keywords

EN

68.37.Ef; 68.47.De; 68.55.Ac

Discipline

• 68.37.Ef: Scanning tunneling microscopy (including chemistry induced with STM)
• 68.47.De: Metallic surfaces

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2003
• Volume: 104
• Issue: 3-4
• Pages: 381-387

Dates

published

2003-09/10

received

2003-07-16

Contributors

author

J. Sadowski

• Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

author

T. Nagao

• Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

author

M. Saito

• Computational Materials Science Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

author

A. Oreshkin

• Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

author

S. Yaginuma

• Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

author

S. Hasegawa

• Department of Physics, Graduate School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

author

T. Ohno

• Computational Materials Science Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

author

T. Sakurai

• Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

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Identifiers

DOI

10.12693/APhysPolA.104.381