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2003 | 104 | 3-4 | 381-387
Article title

STM/STS Studies of the Structural Phase Transition in the Growth of Ultra-Thin Bi Films on Si(111)

Content
Title variants
Languages of publication
EN
Abstracts
EN
Growth of thin metal films on semiconductors has been always an important subject for extensive experimental and theoretical studies. As the applicability of well-ordered nanostructures in electronic applications depends strongly on their size and distribution, it is necessary to understand the processes that govern the growth of such structures. In this paper we present the results of investigation of the room temperature growth of thin Bi film on Si(111). In our study we clarified that rotationally disordered, pseudo-cubic Bi(012) islands with uniform height of ≈13Å are formed in the initial stage of Bi film growth. With increase in the amount of bismuth on the surface, islands interconnect maintaining however their uniform height. This process is further accompanied by the unique and unexpected structural phase transition of the Bi(012) film into a hexagonal Bi(001) film.
Keywords
EN
Year
Volume
104
Issue
3-4
Pages
381-387
Physical description
Dates
published
2003-09/10
received
2003-07-16
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv104n302kz
Identifiers
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