STM/STS Investigations of Surface Evolution of Si(111)-(7×7) Induced with Nickel

• Authors: J. Gutek , S. Szuba , R. Czajka
• Languages of publication: EN

Abstracts

EN

By means of scanning tunneling microscopy and spectroscopy we studied the surface evolution of Si(111)-(7×7) induced with nickel followed by annealing at specified temperatures (400, 600, and 800˚C). Nickel evaporation resulted with 0.05 ML and 0.2 ML coverage was carried out at room temperature with the use of solid phase epitaxy. The characteristic phase formations occurred after gradual annealing the sample depending on the amount of deposited material. At very low coverages scanning tunneling microscopy observation showed two types of ring clusters (1×1 -RC and clusters of the √(19)×√(19) reconstruction) accompanied by the Si(111)-(7×7) surface reconstruction. All above-mentioned phases appeared in that order as the annealing temperature increased. Deposition of about 0.2 ML of Ni followed by annealing at 600˚C formed extended regions of 1×1 nickel silicide reconstruction. Very clear, extended regions of √(19)×√(19) reconstruction appeared when annealed to 800˚C. The electronic properties of observed structures have been studied by the scanning tunneling spectroscopy. Spectroscopy curves measured above certain surface formations revealed the presence of the Si rest atom, NiSi, and NiSi_2 local density of electronic states.

Keywords

EN

68.37.Ef; 68.47.Fg; 73.20.At

Discipline

• 68.47.Fg: Semiconductor surfaces
• 73.20.At: Surface states, band structure, electron density of states
• 68.37.Ef: Scanning tunneling microscopy (including chemistry induced with STM)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2003
• Volume: 104
• Issue: 3-4
• Pages: 345-350

Dates

published

2003-09/10

received

2003-07-16

Contributors

author

J. Gutek

• Institute of Physics, Faculty of Technical Physics, Poznań University of Technology, Nieszawska 13a, 60-965 Poznań, Poland

author

S. Szuba

• Institute of Physics, Faculty of Technical Physics, Poznań University of Technology, Nieszawska 13a, 60-965 Poznań, Poland

author

R. Czajka

• Institute of Physics, Faculty of Technical Physics, Poznań University of Technology, Nieszawska 13a, 60-965 Poznań, Poland
• Center for Interdisciplinary Research, Tohoku University, Aramaki-Aza Aoba, Aoba-ku, 980-8578 Sendai, Japan

References

• 1. G. Kinoda, K. Ogawa, Surf. Sci., 461, 67, 2000
• 2. M. Yoshimura, S. Shinabe, T. Yao, Surf. Sci., 357, 917, 1996
• 3. T. Yao, S. Shinabe, M. Yoshimura, Appl. Surf. Sci., 104-105, 213, 1996
• 4. S.A. Parikh, M.Y. Lee, P.A. Bennett, Surf. Sci., 356, 53, 1996
• 5. Y. Hoshino, T. Nishimura, Y. Asami, K. Sumitomo, Y. Kido, Surf. Sci., 511, 112, 2002
• 6. T.L. Porter, C.S. Chang, U. Knipping, I.S.T. Tsong, Phys. Rev. B, 36, 9150, 1987
• 7. A. Wawro, S. Suto, R. Czajka, A. Kasuya, Phys. Rev. B, 67, 195401, 2003
• 8. B.Z. Olshanetsky, Appl. Surf. Sci., 104-105, 130, 1996
• 9. R. Losio, K.N. Altmann, F.J. Himpsel, Phys. Rev. B, 61, 10845, 2000
• 10. P.A. Bennet, M.Y. Lee, S.A. Parikh, K. Wurm, R.J. Phaneuf, J. Vac. Sci. Technol. A, 13, 1728, 1995
• 11. S.A. Parikh, M.Y. Lee, P.A. Bennet, J. Vac. Sci. Technol. A, 13, 1589, 1995

Identifiers

DOI

10.12693/APhysPolA.104.345