Magnesium Acceptor Energy Levels in Cubic GaN

• Authors: H. Przybylińska , R. Buczko , G. Kocher , W. Jantsch
• Languages of publication: EN

Abstracts

EN

Intra-impurity transitions of the Mg acceptor in cubic phase GaN were measured with the use of photothermal ionization spectroscopy. Apart from the photoionization band several sharp features were detected, related to internal Mg-acceptor transitions. The transitions were identified with the help of effective-mass model calculations involving light- and heavy-hole as well as spin--orbit split-off bands. Transitions to resonant states, associated with the spin-orbit split-off valence band, were also identified. The determined hole binding energy of the Mg acceptor in zinc-blende GaN is 236±1 meV.

Keywords

EN

78.30.-j; 71.55.-i; 71.55.Eq

Discipline

• 71.55.Eq: III-V semiconductors
• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2003
• Volume: 103
• Issue: 6
• Pages: 683-688

Dates

published

2003-06

received

2003-05-30

Contributors

author

H. Przybylińska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R. Buczko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

G. Kocher

• Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria

author

W. Jantsch

• Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria

References

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Identifiers

DOI

10.12693/APhysPolA.103.683