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Abstracts
Intra-impurity transitions of the Mg acceptor in cubic phase GaN were measured with the use of photothermal ionization spectroscopy. Apart from the photoionization band several sharp features were detected, related to internal Mg-acceptor transitions. The transitions were identified with the help of effective-mass model calculations involving light- and heavy-hole as well as spin--orbit split-off bands. Transitions to resonant states, associated with the spin-orbit split-off valence band, were also identified. The determined hole binding energy of the Mg acceptor in zinc-blende GaN is 236±1 meV.
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Pages
683-688
Physical description
Dates
published
2003-06
received
2003-05-30
Contributors
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria
author
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria
References
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- 2. R. Buczko, F. Bassani, Phys. Rev. B, 45, 5838, 1992
- 3. J.M. Luttinger, W. Kohn, Phys. Rev., 97, 869, 1955
- 4. A. Baldereschi, N.O. Lipari, Phys. Rev. B, 8, 2697, 73; Phys. Rev. B, 9, 1525, 1974
- 5. K. Kim, W.R.L. Lambrecht, B. Segall, M. Van Schilfgaarde, Phys. Rev. B, 56, 7363, 1997
- 6. D.J. As, T. Simonsmerier, B. Schοttker, T. Frey, D. Schikora, W. Kriegeis, W. Burkhardt, B.K. Meyer, Appl. Phys. Lett., 73, 1835, 1998
Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv103n624kz