PL EN


Preferences help
enabled [disable] Abstract
Number of results
2003 | 103 | 6 | 683-688
Article title

Magnesium Acceptor Energy Levels in Cubic GaN

Content
Title variants
Languages of publication
EN
Abstracts
EN
Intra-impurity transitions of the Mg acceptor in cubic phase GaN were measured with the use of photothermal ionization spectroscopy. Apart from the photoionization band several sharp features were detected, related to internal Mg-acceptor transitions. The transitions were identified with the help of effective-mass model calculations involving light- and heavy-hole as well as spin--orbit split-off bands. Transitions to resonant states, associated with the spin-orbit split-off valence band, were also identified. The determined hole binding energy of the Mg acceptor in zinc-blende GaN is 236±1 meV.
Keywords
EN
Contributors
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria
author
  • Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria
References
  • 1. J.W. Orton, C.T. Foxon, Rep. Prog. Phys., 61, 1, 1998, and references therein
  • 2. R. Buczko, F. Bassani, Phys. Rev. B, 45, 5838, 1992
  • 3. J.M. Luttinger, W. Kohn, Phys. Rev., 97, 869, 1955
  • 4. A. Baldereschi, N.O. Lipari, Phys. Rev. B, 8, 2697, 73; Phys. Rev. B, 9, 1525, 1974
  • 5. K. Kim, W.R.L. Lambrecht, B. Segall, M. Van Schilfgaarde, Phys. Rev. B, 56, 7363, 1997
  • 6. D.J. As, T. Simonsmerier, B. Schοttker, T. Frey, D. Schikora, W. Kriegeis, W. Burkhardt, B.K. Meyer, Appl. Phys. Lett., 73, 1835, 1998
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv103n624kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.