Tuning of Spectral Sensitivity of AlGaN/GaN UV Detector

• Authors: K. Korona , A. Drabińska , A. Trajnerowicz , R. Bożek , K. Pakuła , J. Baranowski
• Languages of publication: EN

Abstracts

EN

GaN/AlGaN photodetector that exhibits new interesting property is presented. Its spectral sensitivity depends upon bias voltage. Under positive or low negative bias the detector is sensitive mainly to the ultrafiolet radiation absorbed by AlGaN layer 3.7-3.8 eV. Under negative bias U_B below -4 V, the detector is sensitive mainly to the radiation absorbed by GaN (3.4-3.6 eV). The effect can be explained based on numerical calculations of the electric field and potential profiles of this structure. The damping of GaN signal is attributed to activity of 2D electron gas formed on the GaN/AlGaN interface by spontaneous polarization. The reappearing of the signal is attributed to tunneling of holes through AlGaN, stimulated by a high electric field.

Keywords

EN

73.40.Kp; 73.50.Pz; 78.40.Fy

Discipline

• 73.50.Pz: Photoconduction and photovoltaic effects
• 78.40.Fy: Semiconductors
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2003
• Volume: 103
• Issue: 6
• Pages: 675-681

Dates

published

2003-06

received

2003-05-30

Contributors

author

K. Korona

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

A. Drabińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

A. Trajnerowicz

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

R. Bożek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

K. Pakuła

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

J. Baranowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.103.675