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2003 | 103 | 6 | 637-642
Article title

Formation of Mn-Related Defect Band in InP

Content
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Languages of publication
EN
Abstracts
EN
Electron paramagnetic resonance, optical absorption, luminescence and electrical studies of InP highly doped with Mn were performed. Electron paramagnetic resonance revealed presence of manganese in Mn^{2+}(d^5) configuration. In optical absorption, systematic reduction of InP band gap was observed with increase in Mn content. This was correlated with increase in photoionization-type absorption band starting at 0.2 eV. Time-resolved photoluminescence measurements showed decrease in photoexcited carrier lifetime and shortening of donor-acceptor pair recombination time with increase in Mn content. Moreover, photoluminescence band was shifted to lower energies, similarly to optical band gap. In electrical transport two mechanisms of conductivity were observed. Valence band transport dominated at higher temperatures, above 160 K, and activation energy of free-hole concentration was determined as about 0.20 eV. At lower temperatures hopping conductivity, clearly related to Mn defect band, was present. All these results were consistent with assumption of creation of Mn-related defect-band at 0.2 eV above InP valence band. It was found that Mn centers responsible for this band were in configurations of either d^5 or d^5 plus a hole localized about 7Å around corresponding Mn core.
Keywords
EN
Publisher

Year
Volume
103
Issue
6
Pages
637-642
Physical description
Dates
published
2003-06
received
2003-05-30
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
References
  • 1. K.W. Edmonds, K.Y. Wang, R.P. Campion, A.C. Neumann, N.R.S. Farley, B.L. Gallagher, C.T. Foxon, Appl. Phys. Lett., 81, 4991, 2002
  • 2. Yan Dawei, B.C. Cavenett, M.S. Skolnick, J. Phys. C, Solid State Phys., 16, L647, 1983
  • 3. B. Lambert, B. Clerjaud, C. Naud, B. Deveaud, G. Picoli, Y. Toudic, in: Proc. 13th Int. Conf. on Defects in Semiconductors, Coronado (USA), Eds. L.C. Kimerling, J.M. Parsey, Jr., Metallurgical Society of AIME, New York 1985, p. 1141
  • 4. B.I. Shklovskii, A.L. Efros, Electronic Properties of Doped Semiconductors, Springer-Verlag, Berlin 1984
  • 5. Landolt-Bοrnstein, Numerical Data and Functional Relationships in Science and Technology, New Series, Group III, Vol. 17a, Ed. O. Madelung, Springer Verlag, Berlin 1982, p. 281
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv103n616kz
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