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2003 | 103 | 6 | 613-619
Article title

Magnetic Properties of GaMnAs Single Layers and GaInMnAs Superlattices Investigated at Low Temperature and High Magnetic Field

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EN
Abstracts
EN
Magnetotransport properties of GaMnAs single layers and InGaMnAs/InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the influence of carriers confinement through different structures. Both single layers and superlattice structures show paramagnetic-to-ferromagnetic phase transition. In GaMnAs/InGaAs superlattice beside the Curie temperature (T_c≈40 K), a new phase transition is observed close to 13 K.
Keywords
EN
Publisher

Year
Volume
103
Issue
6
Pages
613-619
Physical description
Dates
published
2003-06
received
2003-05-30
Contributors
author
  • Groupe d'Etude des Semiconducteurs CC074, Université Montpellier II, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France
author
  • Groupe d'Etude des Semiconducteurs CC074, Université Montpellier II, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France
author
  • Groupe d'Etude des Semiconducteurs CC074, Université Montpellier II, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France
author
  • Niels Bohr Institute, Copenhagen University, 2100 Copenhagen, Denmark
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
  • MAX-Lab, Lund University, P.O. Box 118, 221 00 Lund, Sweden
author
  • High Magnetic Field Laboratory, CNRS-MPI, 25 Avenue des Martyrs, 38042 Grenoble, France
author
  • Uppsala University, 751 20 Uppsala, Sweden
author
  • Uppsala University, 751 20 Uppsala, Sweden
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv103n614kz
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