Observation of Vacancies in Ga_{1-x}Mn_xAs with Positron Annihilation Spectroscopy

• Authors: F. Tuomisto , J. Slotte , K. Saarinen , J. Sadowski
• Languages of publication: EN

Abstracts

EN

Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8μm thick low temperature MBE GaMnAs layers with Mn content 0.5--5% and different As_2 partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As_2 partial pressure.

Keywords

EN

61.72.Ji; 75.50.Pp; 78.70.Bj

Discipline

• 78.70.Bj: Positron annihilation(for positron states, see 71.60.+z in electronic structure of bulk materials; for positronium chemistry, see 82.30.Gg in physical chemistry and chemical physics)
• 75.50.Pp: Magnetic semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2003
• Volume: 103
• Issue: 6
• Pages: 601-606

Dates

published

2003-06

received

2003-05-30

Contributors

author

F. Tuomisto

• Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Helsinki, Finland

author

J. Slotte

• Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Helsinki, Finland

author

K. Saarinen

• Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Helsinki, Finland

author

J. Sadowski

• Niels Bohr Institute fAFG,Ørsted Laboratory, University of Copenhagen, 2100 Copenhagen, Denmark
• Max-lab, Lund University, 22100 Lund, Sweden
• Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland

References

• 1. J.K. Furdyna, J. Appl. Phys., 64, R 29, 1988
• 2. H. Ohno, J. Magn. Magn. Mater., 200, 110, 1999
• 3. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, D. Ferrand, Science, 287, 1019, 2000
• 4. J. Gebauer, R. Krause-Rehberg, S. Eichler, M. Lyusberg, H. Sohn, E.R. Weber, Appl. Phys. Lett., 71, 638, 1997
• 5. M. Luysberg, H. Sohn, A. Prasard, P. Specht, Z. Liliental-Weber, E.R. Weber, J. Gebauer, R. Krause-Rehberg, J. Appl. Phys., 83, 561, 97
• 6. T. Laine, K. Saarinen, P. Hautojärvi, C. Corbel, M. Missous, J. Appl. Phys., 86, 1888, 1999
• 7. J. Gebauer, F. Bοrner, R. Krause-Rehberg, T.E.M. Staab, W. Bauer-Kugelmann, G. Kοgel, W. Triftshäuser, P. Specht, R.C. Lutz, E.R. Weber, M. Luysberg, J. Appl. Phys., 87, 8368, 2000
• 8. J. Gebauer, R. Krause-Rehberg, C. Domke, Ph. Ebert, K. Urban, T.E.M. Staab, Phys. Rev. B, 63, 045203, 2001
• 9. J. Gebauer, R. Zhao, P. Specht, E.R. Weber, F. Bοrner, F. Redmann, R. Krause-Rehberg, Appl. Phys. Lett., 79, 4313, 2001
• 10. K. Saarinen, P. Hautojärvi, C. Corbel, in: Identification of Defects in Semiconductors, Ed. M. Stavola, Academic Press, New York 1998, p. 209

Identifiers

DOI

10.12693/APhysPolA.103.601