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2003 | 103 | 6 | 601-606
Article title

Observation of Vacancies in Ga_{1-x}Mn_xAs with Positron Annihilation Spectroscopy

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EN
Abstracts
EN
Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8μm thick low temperature MBE GaMnAs layers with Mn content 0.5--5% and different As_2 partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As_2 partial pressure.
Keywords
EN
Contributors
author
  • Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Helsinki, Finland
author
  • Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Helsinki, Finland
author
  • Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Helsinki, Finland
author
  • Niels Bohr Institute fAFG,Ørsted Laboratory, University of Copenhagen, 2100 Copenhagen, Denmark
  • Max-lab, Lund University, 22100 Lund, Sweden
  • Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv103n612kz
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