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Abstracts
Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8μm thick low temperature MBE GaMnAs layers with Mn content 0.5--5% and different As_2 partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As_2 partial pressure.
Discipline
Journal
Year
Volume
Issue
Pages
601-606
Physical description
Dates
published
2003-06
received
2003-05-30
Contributors
author
- Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Helsinki, Finland
author
- Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Helsinki, Finland
author
- Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Helsinki, Finland
author
- Niels Bohr Institute fAFG,Ørsted Laboratory, University of Copenhagen, 2100 Copenhagen, Denmark
- Max-lab, Lund University, 22100 Lund, Sweden
- Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland
References
- 1. J.K. Furdyna, J. Appl. Phys., 64, R 29, 1988
- 2. H. Ohno, J. Magn. Magn. Mater., 200, 110, 1999
- 3. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, D. Ferrand, Science, 287, 1019, 2000
- 4. J. Gebauer, R. Krause-Rehberg, S. Eichler, M. Lyusberg, H. Sohn, E.R. Weber, Appl. Phys. Lett., 71, 638, 1997
- 5. M. Luysberg, H. Sohn, A. Prasard, P. Specht, Z. Liliental-Weber, E.R. Weber, J. Gebauer, R. Krause-Rehberg, J. Appl. Phys., 83, 561, 97
- 6. T. Laine, K. Saarinen, P. Hautojärvi, C. Corbel, M. Missous, J. Appl. Phys., 86, 1888, 1999
- 7. J. Gebauer, F. Bοrner, R. Krause-Rehberg, T.E.M. Staab, W. Bauer-Kugelmann, G. Kοgel, W. Triftshäuser, P. Specht, R.C. Lutz, E.R. Weber, M. Luysberg, J. Appl. Phys., 87, 8368, 2000
- 8. J. Gebauer, R. Krause-Rehberg, C. Domke, Ph. Ebert, K. Urban, T.E.M. Staab, Phys. Rev. B, 63, 045203, 2001
- 9. J. Gebauer, R. Zhao, P. Specht, E.R. Weber, F. Bοrner, F. Redmann, R. Krause-Rehberg, Appl. Phys. Lett., 79, 4313, 2001
- 10. K. Saarinen, P. Hautojärvi, C. Corbel, in: Identification of Defects in Semiconductors, Ed. M. Stavola, Academic Press, New York 1998, p. 209
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv103n612kz