Mn Impurity in GaN Studied by Electron Paramagnetic Resonance

• Authors: A. Wołoś , M. Palczewska , Z. Wilamowski , M. Kamińska , A. Twardowski , M. Boćkowski , I. Grzegory , S. Porowski
• Languages of publication: EN

Abstracts

EN

We present the results of electron paramagnetic resonance investigations of GaN bulk crystals doped with Mn. The EPR experiment shows the Mn^{2+} resonance in all the investigated n-type crystals, while in highly resistive samples extra doped with Mg acceptor the Mn^{2+} resonance decreases. This is a consequence of the location of Mn acceptor level in GaN band gap. The analysis of the spin relaxation times reveals the Korringa scattering as the dominating spin relaxation mechanism in n-type GaN:Mn crystals. The effective exchange constant determined from spin relaxation rate temperature dependence is of the order of 14 meV.

Keywords

EN

71.55.-i; 71.55.Eq; 71.70.Gm

Discipline

• 71.55.Eq: III-V semiconductors
• 71.70.Gm: Exchange interactions
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2003
• Volume: 103
• Issue: 6
• Pages: 595-600

Dates

published

2003-06

received

2003-05-30

Contributors

author

A. Wołoś

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Palczewska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

Z. Wilamowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Kamińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

A. Twardowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Boćkowski

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

I. Grzegory

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

S. Porowski

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.103.595