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2003 | 103 | 6 | 579-584
Article title

Infrared Lateral Photoconductivity of InGaAs Quantum Dots: the Temperature Dependence

Content
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Languages of publication
EN
Abstracts
EN
We report the temperature dependence of lateral infrared photoconductivity in multilayer InGaAs/GaAs heterostructures with selectively doped quantum dots fabricated by metalorganic chemical vapor deposition. Two spectral lines of normal-inci dence intersubband photoconductivity (90 meV and 230 meV) and a line originating from interband transitions (930 meV) were observed. The photoconductivity line 230 meV is revealed up to the temperature 140 K. The long-wavelength photoconductivity line 90 meV is quenched rapidly at the temperature 30÷40 K owing to redistribution of photoexcited carriers between small and large dots. The obtained results confirm the hypothesis about bimodal distribution of quantum dot sizes.
Keywords
EN
Year
Volume
103
Issue
6
Pages
579-584
Physical description
Dates
published
2003-06
received
2003-05-30
Contributors
  • Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia
author
  • Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia
author
  • Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia
author
  • Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia
author
  • Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia
author
  • Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv103n610kz
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