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2003 | 103 | 6 | 579-584
Article title

Infrared Lateral Photoconductivity of InGaAs Quantum Dots: the Temperature Dependence

Content
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Languages of publication
EN
Abstracts
EN
We report the temperature dependence of lateral infrared photoconductivity in multilayer InGaAs/GaAs heterostructures with selectively doped quantum dots fabricated by metalorganic chemical vapor deposition. Two spectral lines of normal-inci dence intersubband photoconductivity (90 meV and 230 meV) and a line originating from interband transitions (930 meV) were observed. The photoconductivity line 230 meV is revealed up to the temperature 140 K. The long-wavelength photoconductivity line 90 meV is quenched rapidly at the temperature 30รท40 K owing to redistribution of photoexcited carriers between small and large dots. The obtained results confirm the hypothesis about bimodal distribution of quantum dot sizes.
Keywords
EN
Publisher

Year
Volume
103
Issue
6
Pages
579-584
Physical description
Dates
published
2003-06
received
2003-05-30
Contributors
  • Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia
author
  • Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia
author
  • Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia
author
  • Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia
author
  • Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia
author
  • Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia
References
  • 1. S.-F. Tang, S.-Y. Lin, S.-C. Lee, Appl. Phys. Lett., 78, 2428, 2001
  • 2. E. Finkman, S. Maimon, V. Immer, G. Bahir, S.E. Schacham, F. Fossard, F.H. Julien, J. Brault, M. Gedry, Phys. Rev. B, 63, 045323, 2001
  • 3. S. Maimon, E. Finkman, G. Bahir, S.E. Schacham, J.M. Garsia, P.M. Petroff, Appl. Phys. Lett., 73, 2003, 1998
  • 4. H.C. Liu, M. Gao, J. Mc Caffey, Z.R. Wasilewski, S. Fafard, Appl. Phys. Lett., 78, 79, 2001
  • 5. D. Pan, E. Towe, S. Kennerly, Appl. Phys. Lett., 75, 2719, 1999
  • 6. D. Pan, E. Towe, S. Kennerly, Appl. Phys. Lett., 73, 1937, 1998
  • 7. S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen, M. Razedhi, Appl. Phys. Lett., 73, 963, 1998
  • 8. J. Phillips, K. Kamath, P. Bhattacharya, Appl. Phys. Lett., 72, 2020, 1998
  • 9. S.-W. Lee, K. Hirakawa, Y. Shimada, Physica E, 7, 499, 2000
  • 10. L. Chu, A. Zenner, M. Bichter, G. Abstreiter, Appl. Phys. Lett., 79, 2249, 2001
  • 11. L.D. Moldavskaya, V.I. Shashkin, M.N. Drozdov, Y.N. Drozdov, V.M. Daniltsev, A.V. Murel, B.A. Andreev, A.N. Yablonsky, S.A. Gusev, D.M. Gaponova, Physica E, 17, 634, 2003
  • 12. G. Saint-Girons, I. Sagnes, J. Appl. Phys., 91, 10115, 2002
  • 13. Y.H. Kang, J. Park, U.H. Lee, S. Hong, Appl. Phys. Lett., 82, 1099, 2003
  • 14. D. Pal, D. Firsov, E. Towe, Physica E, 15, 6, 2002
  • 15. M. Grundmann, O. Stier, D. Bimberg, Phys. Rev. B, 52, 11969, 1995
  • 16. B. Aslan, H.C. Liu, M. Korkusinski, S.-J. Cheng, P. Hawrylak, Appl. Phys. Lett., 82, 630, 2003
  • 17. J.J. Finley, M. Skalitz, M. Arzberger, A. Zrenner, G. Bohm, G. Abstreiter, Appl. Phys. Lett., 73, 2618, 2003
  • 18. E.-T. Kim, Z. Chen, A. Madhukar, Appl. Phys. Lett., 79, 3341, 2001
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv103n610kz
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