Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies

• Authors: B. Chwalisz , A. Wysmołek , R. Bożek , K. Korona , R. Stępniewski , W. Knap , K. Pakuła , J. Baranowski , N. Grandjean , J. Massies , P. Prystawko , I. Grzegory
• Languages of publication: EN

Abstracts

EN

Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emission line first decreases up to 20 K, then increases, reaching a maximum around 90 K, and then decreases again in the higher temperature range. The observed behavior is discussed in terms of localization at the interface potential fluctuations. It is argued that the temperature activated migration and subsequent release of the excitons from traps that occurs between 20 K and 90 K are responsible for the observed S-like shape of the energy dependence. The obtained results allow a direct characterization of the energy fluctuations present in GaN/AlGaN quantum wells grown by different techniques.

Keywords

EN

78.55.Cr; 73.20.-r; 73.21.-b; 74.40.+k

Discipline

• 73.20.-r: Electron states at surfaces and interfaces
• 78.55.Cr: III-V semiconductors
• 73.21.-b: Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems(for electron states in nanoscale materials, see 73.22.-f)

• Journal: Acta Physica Polonica A
• Year: 2003
• Volume: 103
• Issue: 6
• Pages: 573-578

Dates

published

2003-06

received

2003-05-30

Contributors

author

B. Chwalisz

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

A. Wysmołek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

R. Bożek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

K. Korona

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

R. Stępniewski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

W. Knap

• Groupe d'Etude des Semiconducteurs, CNRS-UMR5650 Université Montpellier 2, Montpellier, France

author

K. Pakuła

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

J. Baranowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

N. Grandjean

• CNRS - CRHEA, rue Bernard Grégory, Valbonne-Sophia-Antipolis, France

author

J. Massies

• CNRS - CRHEA, rue Bernard Grégory, Valbonne-Sophia-Antipolis, France

author

P. Prystawko

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, Warsaw, Poland

author

I. Grzegory

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, Warsaw, Poland

References

• 1. H.C. Ko, D.-C. Park, Y. Kawakami, S. Fujita, S. Fujita, Y.-S. Kim, Appl. Phys. Lett., 73, 1388, 1998
• 2. P. Tomasini, K. Arai, F. Lu, Z.Q. Zhu, T. Sekiguchi, T. Yao, M.Y. Shen, T. Goto, J. Appl. Phys., 83, 6028, 1998
• 3. Y.H. Cho, G.H. Gainer, A.J. Fisher, J.J. Song, S. Keller, U.K. Mishra, S.P. Den-Baars, Appl. Phys. Lett., 73, 1370, 1998
• 4. M. Leroux, N. Grandjean, M. Laügt, J. Massies, B. Gil, P. Lefebvre, P. Bigenwald, Phys. Rev. B, 58, R13371, 1998
• 5. H. Haratizadeh, P.P. Paskov, G. Pozina, P.O. Holtz, B. Monemar, S. Kamiyama, M. Iwana, H. Amano, I. Kasaki, Appl. Phys. Lett., 80, 1373, 2002
• 6. M. Gallart, P. Lefebvre, A. Morel, T. Taliercio, B. Gil, J. Allegre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies, Phys. Status Solidi A, 183, 61, 2001
• 7. K.P. Korona, A. Wysmolek, K. Pakula, R. Stepniewski, J.M. Baranowski, I. Grzegory, B. Lucznik, M. Wroblewski, S. Porowski, Appl. Phys. Lett., 69, 788, 1995

Identifiers

DOI

10.12693/APhysPolA.103.573