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Abstracts
Magnetotransport characterisation of field effect transistors processed on GaAs/GaAlAs heterostructure was done at 4.2 K for magnetic fields (B) up to 7 T. Three field effect transistors were processed on a single dice and differed by the length (L) of the gate. Electron mobility (μ) in field effect transistors was estimated from dependence of transistor's conductivity vs. B. The results show a decrease inμ with decreasing L that suggests that scattering by edges of the gated part of a transistor limits the electron mobility. Quality factor (Q) of transistors as resonant detectors of THz radiation was calculated. A high value of Q shows that such field effect transistors with sub-micron L are promising devices that can operate at THz frequencies.
Journal
Year
Volume
Issue
Pages
545-551
Physical description
Dates
published
2003-06
received
2003-05-30
Contributors
author
- Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
- GES-CNRS - Université Montpellier 2, 34900 Montpellier, France
author
- Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- IPM, Russian Academy of Sciences, GSP-105, Niznij Novgorod, 603950, Russia
author
- IPM, Russian Academy of Sciences, GSP-105, Niznij Novgorod, 603950, Russia
References
- 1. B. Ferguson, X.-C. Zhang, Nature Mater., 1, 26, 2002
- 2. M. Dyakonov, M. Shur, Phys. Rev. Lett., 71, 2465, 93
- 3. M. Dyakonov, M. Shur, Appl. Phys. Lett., 67, 1137, 95
- 4. W. Knap, Y. Deng, S. Rumyantsev, J.Q. Lü, M.S. Shur, C.A. Saylor, L.C. Brunel, Appl. Phys. Lett., 80, 3433, 2002
- 5. W. Knap, Y. Deng, S. Rumyantsev, M.S. Shur, Appl. Phys. Lett., 81, 4637, 2002
- 6. X.G. Peralta, S.J. Allen, M.C. Wanke, N.E. Harff, J.A. Simmons, M.P. Lilly, J.L. Reno, P.J. Burke, J.P. Eisenstein, Appl. Phys. Lett., 81, 1627, 2002
- 7. J. Lusakowski, accepted for publication in Fizika Tverdogo Tela
Document Type
Publication order reference
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bwmeta1.element.bwnjournal-article-appv103n605kz