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2003 | 103 | 6 | 533-538
Article title

An Improved 2.5 GHz Electron Pump: Single-Electron Transport through Shallow-Etched Point Contacts Driven by Surface Acoustic Waves

Content
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Languages of publication
EN
Abstracts
EN
We present an experimental study of a 2.5 GHz electron pump based on the quantized acoustoelectric current driven by surface acoustic waves through a shallow-etched point contact in a GaAs/AlGaAs heterostructure. At low temperatures and with an additional counter-propagating surface acoustic waves beam, up to n=20 current plateaus at I=nef could be resolved, where n is an integer, e the electron charge, and f the surface acoustic waves frequency. In the best case the accuracy of the first plateau at 0.40 nA was estimated to beΔ I/I=±25 ppm over 0.25 mV in gate voltage, which is better than previous results.
Keywords
EN
Year
Volume
103
Issue
6
Pages
533-538
Physical description
Dates
published
2003-06
received
2003-05-30
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv103n603kz
Identifiers
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