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Languages of publication
Abstracts
A numerical procedure based on the time-dependent Kohn-Sham equation with an improved boundary condition for the modeling double barrier resonant tunneling diode is presented. The dependence of current components on well widths in AlGaAs/GaAs/AlGaAs structure is studied. An oscillatory behavior was observed as the width of the well is changed. Our evaluation shows that this oscillation cannot attribute to the well-known oscillation at resonance state.
Discipline
Journal
Year
Volume
Issue
Pages
47-56
Physical description
Dates
published
2003-01
received
2002-06-07
revised
2002-11-14
Contributors
author
- Department of Physics, Tarbiat Modarres University, Tehran, Iran
- The Center for Theoretical Physics and Mathematics, AEOI, P.O. Box 14155-1339 Tehran, Iran
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv103n103kz