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2003 | 103 | 1 | 47-56
Article title

Numerical Simulation of Current Dependence on Well Widths in AlGaAs/GaAs/AlGaAs Double Barrier Diode Structures

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Abstracts
EN
A numerical procedure based on the time-dependent Kohn-Sham equation with an improved boundary condition for the modeling double barrier resonant tunneling diode is presented. The dependence of current components on well widths in AlGaAs/GaAs/AlGaAs structure is studied. An oscillatory behavior was observed as the width of the well is changed. Our evaluation shows that this oscillation cannot attribute to the well-known oscillation at resonance state.
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  • Department of Physics, Tarbiat Modarres University, Tehran, Iran
  • The Center for Theoretical Physics and Mathematics, AEOI, P.O. Box 14155-1339 Tehran, Iran
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bwmeta1.element.bwnjournal-article-appv103n103kz
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