Temperature Dependence of the First-Order Raman Phonon Lines in GaS_{0.25}Se_{0.75} Layered Crystals

• Authors: N. Gasanly
• Languages of publication: EN

Abstracts

EN

Systematic measurements by Raman scattering of the frequency and line width of the zone-center optical modes in GaS_{0.25}Se_{0.75} layered crystal over the temperature range of 10-300 K are carried out. The analysis of temperature dependence of intralayer modes shows that frequency shift and line broadening are successfully modeled by including the contributions from thermal expansion and lattice anharmonicity. The purely anharmonic contribution (phonon-phonon coupling) is found to be due to three-phonon processes.

Keywords

EN

78.20.-e; 78.30.-j; 78.30.Hv

Discipline

• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 78.30.Hv: Other nonmetallic inorganics

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 102
• Issue: 6
• Pages: 801-810

Dates

published

2002-12

received

2002-07-04

(unknown)

2002-09-24

Contributors

author

N. Gasanly

• Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

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Identifiers

DOI

10.12693/APhysPolA.102.801