EPR of Vanadyl Ion Impurities in Single Crystals of RbHC_2O_4

• Authors: V. Singh , V. Jain
• Languages of publication: EN

Abstracts

EN

The EPR of VO^{2+} in RbHC_2O_4 single crystals has been studied in X-band at≈290 K. Three sites have been observed. VO^{2+} enters the lattice at substitutional and interstitial sites. Spin-Hamiltonian parameters are evaluated.

Keywords

EN

76.30.Fc  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 102
• Issue: 6
• Pages: 795-799

Dates

published

2002-12

received

2002-06-10

References

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Identifiers

DOI

10.12693/APhysPolA.102.795