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2002 | 102 | 4-5 | 541-554
Article title

Interface Engineering in Heteroepitaxy

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EN
Abstracts
EN
We report the importance of interface engineering in heteroepitaxy with examples of plasma-assisted molecular beam epitaxial ZnO growths on (0001) sapphire substrates and on (0001) GaN/sapphire templates, whose interfaces are engineered to improve and to control properties of ZnO films. The growth of rocksalt structure MgO buffer on Al_2O_3 (0001) is developed for ZnO epitaxy. By employing the MgO buffer layer, the formation of 30^o rotated mixed domains is prohibited and two-dimensional layer-by-layer growth of ZnO on sapphire substrate is achieved. High-resolution X-ray diffraction reveals the superior improvement in a crystal quality of ZnO films with an MgO buffer. Polarity of wurtzite structure ZnO films on Ga-polar GaN/sapphire templates is controlled by changing interface structures. By forming a single crystalline, monoclinic Ga_2O_3 interfacial layer between GaN and ZnO through O-plasma pre-exposure on the Ga-polar GaN surface, O-polar ZnO films are grown. By forming the ZnO/GaN heterointerface without an interfacial layer through the Zn pre-exposure on the Ga-polar GaN surface, Zn-polar ZnO films are grown.
Keywords
Year
Volume
102
Issue
4-5
Pages
541-554
Physical description
Dates
published
2002-10/11
received
2002-06-07
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv102n422kz
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