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2002 | 102 | 4-5 | 495-512
Article title

Semiconductor Materials for Ultrafast Photoswitches

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EN
Abstracts
EN
This paper gives a review of semiconductor materials that are used to fabricate ultrafast photoswitches. The optoelectrical response of the switches is first described with simple models, from which the material requirements are deduced. The basic principles of the required material properties - ultrashort free carrier lifetime and high mobility, high dark resistivity, and high field breakdown - are explained. Then, the most popular ultrafast semiconductors are listed, together with their characteristics. A special emphasis is put on low-temperature grown GaAs. Finally, two applications of these ultrafast materials are presented, namely antennae for terahertz radiation and all-optical nonlinear devices.
Keywords
Year
Volume
102
Issue
4-5
Pages
495-512
Physical description
Dates
published
2002-10/11
received
2002-06-07
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