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2002 | 102 | 4-5 | 667-672
Article title

Disorder-Induced Effects in III-V Semiconductors with Mn

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Abstracts
EN
The substitution of Mn in the III-V diluted magnetic semiconductors leads to a strong electron scattering on impurities. Besides the features induced in the valence band by the hybridization with the Mn d-states, also the conduction band is affected by the absence of the Mn s-states at its edge. Also the high concentration of compensating donors modifies the band structure. This is shown on the absorption coefficientε_2(ω) of GaP doped with Mn and Se. The absorption evaluated by ab initio density functional calculations starts with a smooth tail and does not show the structure typical of III-V materials. We analyze these features and the role of the donors on model systems using the tight-binding coherent potential approach.
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author
  • Institute of Physics, AS CR, Na Slovance 2, 182 21 Prague 8, Czech Republic
author
  • Institute of Physics, AS CR, Na Slovance 2, 182 21 Prague 8, Czech Republic
References
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Publication order reference
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bwmeta1.element.bwnjournal-article-appv102n411kz
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