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2002 | 102 | 4-5 | 649-657
Article title

Investigation of the Non-Square InGaAsP/InP Quantum Wells in the Electric Field by Photoreflectance

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EN
Abstracts
EN
Non-square quantum wells in electric field have been investigated by photoreflectance and photoluminescence spectroscopies. The structures have been obtained by a post-growth modification (rapid thermal annealing) of standard 1.55μm InGaAsP-based laser structures that were grown by gas source molecular beam epitaxy. During rapid thermal annealing a migration of semiconductor atoms across quantum well interfaces changes the quantum well profile from a square well to a rounded well. The modification of the profile changes energy levels in the quantum well and in consequence a blue shift of the quantum well emission peak is observed in photoluminescence. In this paper the blue shift of the ground state transition of post-growth modified quantum well structures has been investigated by both photoluminescence and photoreflectance techniques. Also a blue shift of excited state transitions has been observed in photoreflectance spectra. Generally, a stronger blue shift for the ground state transition than for excited state transitions has been observed. Additionally, oscillator strengths for all quantum well transitions have been determined from photoreflectance spectra. It has been found that the oscillator strength is constant for all quantum well transitions despite of modification of the quantum well profile.
Keywords
EN
Contributors
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S 4L7 Canada
author
  • Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S 4L7 Canada
author
  • Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S 4L7 Canada
author
  • Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S 4L7 Canada
References
  • 1. Semiconductor Quantum Well Intermixing, Ed. E.H. Li, Gordon and Breach, Amsterdam 1997
  • 2. J.F. Hazell, D.A. Thompson, N. Bertsch, J.G. Simmons, B.J. Robinson, G.I. Sproule, Semicond. Sci. Technol., 16, 986, 2001
  • 3. N. Cao, B.B. Elenkrig, J.G. Simmons, D.A. Thompson, N. Puetz, Appl. Phys. Lett., 70, 3419, 1997
  • 4. M. Boudreau, M. Boumerzoug, P. Mascher, P.E. Jessop, Appl. Phys. Lett., 63, 3014, 1993
  • 5. F.H. Pollak, Modulation Spectroscopy of Semiconductor and Semiconductor Microstructures, in: Handbook on Semiconductors, Vol. 2, Ed. M. Balkanski, Elsevier Science, Amsterdam 1994, p. 527
  • 6. T.J.C. Hosea, Phys. Status Solidi B, 189, 531, 1995
  • 7. K. Jezierski P. Markiewicz, J. Misiewicz, M. Panek, B. Sciana, R. Korbutowicz, M. Tlaczala, J. Appl. Phys., 77, 4139, 1995
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv102n408kz
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