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2002 | 102 | 4-5 | 633-641
Article title

Electronic Structure and Optical Properties of GaAs_{1-x}N_x and Ga_{1-x}B_xAs Alloys

Content
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Languages of publication
EN
Abstracts
EN
The electronic band structure of GaAs_{1-x}N_x (x=0.016 and 0.031) and Ga_{1-x}B_xAs (x= 0.031) is studied by ab initio calculations using a supercell approach. Based on ab initio calculations and group theory we present a comprehensive analysis of the electronic structure of GaAs:N and GaAs:B alloys. In particular, we study the effective mass of conduction electrons in GaAs:N as a function of pressure and the Fermi energy. We find that the lowest conduction band is strongly non-parabolic, which leads to an increase in the effective mass with the electron energy. The rate of the increase is enhanced by the hydrostatic pressure. Theoretical results are compared to experimental data, and a qualitative agreement is found.
Keywords
EN
Publisher

Year
Volume
102
Issue
4-5
Pages
633-641
Physical description
Dates
published
2002-10/11
received
2002-06-07
Contributors
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • High Pressure Research Center, Polish Academy of Sciences, 02-480 Warsaw, Poland
  • Institute of Physics and Astronomy, University of Aarhus, 8000 Aarhus, Denmark
author
  • Institute of Physics and Astronomy, University of Aarhus, 8000 Aarhus, Denmark
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv102n406kz
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