Electronic Structure and Optical Properties of GaAs_{1-x}N_x and Ga_{1-x}B_xAs Alloys

• Authors: N. Gonzalez Szwacki , P. Bogusławski , I. Gorczyca , N. Christensen , A. Svane
• Languages of publication: EN

Abstracts

EN

The electronic band structure of GaAs_{1-x}N_x (x=0.016 and 0.031) and Ga_{1-x}B_xAs (x= 0.031) is studied by ab initio calculations using a supercell approach. Based on ab initio calculations and group theory we present a comprehensive analysis of the electronic structure of GaAs:N and GaAs:B alloys. In particular, we study the effective mass of conduction electrons in GaAs:N as a function of pressure and the Fermi energy. We find that the lowest conduction band is strongly non-parabolic, which leads to an increase in the effective mass with the electron energy. The rate of the increase is enhanced by the hydrostatic pressure. Theoretical results are compared to experimental data, and a qualitative agreement is found.

Keywords

EN

71.20.Nr; 78.20.Bh

Discipline

• 78.20.Bh: Theory, models, and numerical simulation
• 71.20.Nr: Semiconductor compounds

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 102
• Issue: 4-5
• Pages: 633-641

Dates

published

2002-10/11

received

2002-06-07

Contributors

author

N. Gonzalez Szwacki

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Bogusławski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

I. Gorczyca

• High Pressure Research Center, Polish Academy of Sciences, 02-480 Warsaw, Poland

author

N. Christensen

• Institute of Physics and Astronomy, University of Aarhus, 8000 Aarhus, Denmark

author

A. Svane

• Institute of Physics and Astronomy, University of Aarhus, 8000 Aarhus, Denmark

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Identifiers

DOI

10.12693/APhysPolA.102.633