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2002 | 102 | 4-5 | 627-632
Article title

Relationship between Sample Morphology and Carrier Diffusion Length in GaN Thin Films

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EN
Abstracts
EN
Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.
Keywords
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Semicond. Sci. and Technol. Lab., Macquarie Univ., Sydney, Australia
author
  • Microstructural Analysis Unit, University of Technology Sydney, Sydney, Australia
author
  • Institute of Solid State Physics, Bremen University, Bremen, Germany
author
  • Institute of Solid State Physics, Bremen University, Bremen, Germany
author
  • Institute of Solid State Physics, Bremen University, Bremen, Germany
author
  • High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland
author
  • High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland
  • High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland
author
  • High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland
author
  • High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland
author
  • High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland
author
  • High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland
author
  • High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland
author
  • High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland
References
  • 1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, T. Mukai, MRS Internet J. of Nitride Semicond. Res., 4S1, G1.1, 1999
  • 2. F.A. Ponce, in: GaN and Related Materials, Ed. S.J. Paerton, in series Optoelectronic Properties of Semiconductors and Superlattices, Ed. M.O. Manasreh, Vol. 2, Gordon and Breach Science Publishers, Amsterdam 1997, ch. 5, p. 141
  • 3. S. Nakamura, IEICE Trans. Electron., E83-C, 529, 2000
  • 4. M. Godlewski, T. Bottcher, S. Figge, D. Hommel, T. Paskova, B. Monemar, E.M. Goldys, M. Phillips, unpublished results
  • 5. M. Godlewski, E.M. Goldys, in: Smart Optical Inorganic Structures and Devices, Eds. S.P. Asmontas, J. Gradauskas, Proc. SPIE, 4318, 99, 2001
  • 6. E.M. Goldys, M. Godlewski, R. Langer, A. Barski, Appl. Surf. Sci., 153, 143, 2000
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv102n405kz
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