Relationship between Sample Morphology and Carrier Diffusion Length in GaN Thin Films

• Authors: M. Godlewski , E. Goldys , M. Phillips , T. Böttcher , S. Figge , D. Hommel , R. Czernecki , P. Prystawko , M. Leszczynski , P. Perlin , P. Wisniewski , T. Suski , M. Bockowski , I. Grzegory , S. Porowski
• Languages of publication: EN

Abstracts

EN

Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.

Keywords

EN

61.72.Ff; 61.72.Mm; 68.37.Hk; 78.60.Hk

Discipline

• 61.72.Mm: Grain and twin boundaries
• 68.37.Hk: Scanning electron microscopy (SEM) (including EBIC)
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
• 78.60.Hk: Cathodoluminescence, ionoluminescence

• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 102
• Issue: 4-5
• Pages: 627-632

Dates

published

2002-10/11

received

2002-06-07

Contributors

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Goldys

• Semicond. Sci. and Technol. Lab., Macquarie Univ., Sydney, Australia

author

M. Phillips

• Microstructural Analysis Unit, University of Technology Sydney, Sydney, Australia

author

T. Böttcher

• Institute of Solid State Physics, Bremen University, Bremen, Germany

author

S. Figge

• Institute of Solid State Physics, Bremen University, Bremen, Germany

author

D. Hommel

• Institute of Solid State Physics, Bremen University, Bremen, Germany

author

R. Czernecki

• High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland

author

P. Prystawko

• High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland

author

M. Leszczynski

• High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland

author

P. Perlin

• High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland

author

P. Wisniewski

• High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland

author

T. Suski

• High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland

author

M. Bockowski

• High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland

author

I. Grzegory

• High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland

author

S. Porowski

• High Pressure Res. Center (Unipress), Polish Acad. Sci., Warsaw, Poland

References

• 1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, T. Mukai, MRS Internet J. of Nitride Semicond. Res., 4S1, G1.1, 1999
• 2. F.A. Ponce, in: GaN and Related Materials, Ed. S.J. Paerton, in series Optoelectronic Properties of Semiconductors and Superlattices, Ed. M.O. Manasreh, Vol. 2, Gordon and Breach Science Publishers, Amsterdam 1997, ch. 5, p. 141
• 3. S. Nakamura, IEICE Trans. Electron., E83-C, 529, 2000
• 4. M. Godlewski, T. Bottcher, S. Figge, D. Hommel, T. Paskova, B. Monemar, E.M. Goldys, M. Phillips, unpublished results
• 5. M. Godlewski, E.M. Goldys, in: Smart Optical Inorganic Structures and Devices, Eds. S.P. Asmontas, J. Gradauskas, Proc. SPIE, 4318, 99, 2001
• 6. E.M. Goldys, M. Godlewski, R. Langer, A. Barski, Appl. Surf. Sci., 153, 143, 2000

Identifiers

DOI

10.12693/APhysPolA.102.627