High-Frequency Noise Sources in Quantum Wells

• Authors: L. Ardaravičius , J. Liberis , A. Matulionis
• Languages of publication: EN

Abstracts

EN

Hot-electron noise is investigated for InGaAs and InAs quantum wells containing a two-dimensional electron gas channel in a pulsed electric field applied parallel to the interfaces. Noise sources resulting from hot-electron "thermal" motion, electron temperature fluctuations, and real-space transfer are observed. The experimental results on hot-electron "thermal" noise are used to estimate energy relaxation time in the field range where other sources do not play any important role. Measurements of noise anisotropy in the plane of electron confinement are used to discuss real-space-transfer noise. High-frequency noise technique is used to study hot-electron trapping, and trap location in InAlAs/InGaAs/InAlAs heterostructure channels is determined.

Keywords

EN

72.20.Ht; 72.70.+m; 73.40.Kp

Discipline

• 72.70.+m: Noise processes and phenomena
• 72.20.Ht: High-field and nonlinear effects
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 102
• Issue: 2
• Pages: 329-335

Dates

published

2002-08

received

2001-09-23

Contributors

author

L. Ardaravičius

• Semiconductor Physics Institute, 11 A. Goštauto, Vilnius 2600, Lithuania

author

J. Liberis

• Semiconductor Physics Institute, 11 A. Goštauto, Vilnius 2600, Lithuania

author

A. Matulionis

• Semiconductor Physics Institute, 11 A. Goštauto, Vilnius 2600, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.102.329