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2002 | 102 | 2 | 329-335
Article title

High-Frequency Noise Sources in Quantum Wells

Content
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EN
Abstracts
EN
Hot-electron noise is investigated for InGaAs and InAs quantum wells containing a two-dimensional electron gas channel in a pulsed electric field applied parallel to the interfaces. Noise sources resulting from hot-electron "thermal" motion, electron temperature fluctuations, and real-space transfer are observed. The experimental results on hot-electron "thermal" noise are used to estimate energy relaxation time in the field range where other sources do not play any important role. Measurements of noise anisotropy in the plane of electron confinement are used to discuss real-space-transfer noise. High-frequency noise technique is used to study hot-electron trapping, and trap location in InAlAs/InGaAs/InAlAs heterostructure channels is determined.
Keywords
EN
Contributors
  • Semiconductor Physics Institute, 11 A. Goštauto, Vilnius 2600, Lithuania
author
  • Semiconductor Physics Institute, 11 A. Goštauto, Vilnius 2600, Lithuania
author
  • Semiconductor Physics Institute, 11 A. Goštauto, Vilnius 2600, Lithuania
References
  • 1. H.L. Hartnagel, R. Katilius, A. Matulionis, Microwave Noise in Semiconductor Devices, Wiley, New York 2001
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  • 8. R. Katilius, A. Matulionis, Fluct. Noise Lett., 1, R81, 2001
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv102n226kz
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