X-ray Synchrotron Studies of Nanostructure Formation in High Temperature - Pressure Treated Silicon Implanted with Hydrogen

• Authors: K. Wieteska , W. Wierzchowski , W. Graeff , A. Misiuk , A. Barcz , L. Bryja , V. Popov
• Languages of publication: EN

Abstracts

EN

The effects of various high temperature-pressure treatments in Czochralski grown silicon (Cz-Si) implanted with 130 keV hydrogen to the dose of 4times10^{16} cm^{-2} were investigated using synchrotron X-ray topographic methods and rocking curve measurements. The high temperature- pressure processes included 10 h annealing at 450°C, 650°C, and 725°C at argon pressure 12 kbar and 1 bar. The topographic investigations were performed with projection and section methods in back-reflection and transmission geometry. It was found that annealing resulted in significantly reduced strain induced by the implantation, which became undetectable with presently used very sensitive synchrotron arrangement. A significant difference between the Cz-Si:H samples annealed at high and atmospheric pressure was observed. In the first case a distinct topographic contrast attributed to the formation of comparatively larger inclusions was observed. This effect was different at different temperatures. The samples annealed at enhanced pressure were more uniform and often produced significant interference effects.

Keywords

EN

68.55.-a; 61.46.+w

Discipline

• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 102
• Issue: 2
• Pages: 239-244

Dates

published

2002-08

received

2001-09-23

Contributors

author

K. Wieteska

• Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

W. Graeff

• HASYLAB at DESY, Notkestraße 85, 22603 Hamburg, Germany

author

A. Misiuk

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Barcz

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

L. Bryja

• Wrocław Technical University, Wyb. Wyspiańskiego 27, 53-370 Wrocław, Poland

author

V. Popov

• Institute of Semiconductor Physics, RAS, Lavrentieva 13, 630090 Novosibirsk, Russia

References

• 1. A. Misiuk, H.B. Surma, I.V. Antonova, V.P. Popov, J. Bak-Misiuk, M. Lopez, A. Romano-Rodriguez, A. Barcz, J. Jun, Solid State Phen., 69-70, 345, 1999
• 2. A. Misiuk, J. Bak-Misiuk, A. Barcz, A. Romano-Rodriguez, I.V. Antonova, V.P. Popov, C.A. Londos, J. Jun, Int. J. Hydrog. Energy, 26, 483, 2001
• 3. K.S. Zhuravlev, I.E. Tyschenko, private communication
• 4. K. Wieteska, W. Wierzchowski, W. Graeff, K. Dłużewska, Phys. Status Solidi A, 168, 11, 1998
• 5. V. Rainieri, S. Coffa, E. Szilagyi, J. Gyulai, E. Rimini, Phys. Rev. B, 61, 937, 2000

Identifiers

DOI

10.12693/APhysPolA.102.239