Investigation of Lattice Strains in Layered Structures Containing Porous Silicon

• Authors: W. Wierzchowski , K. Wieteska , W. Graeff , A. Brzozowski , E. Nossarzewska-Orłowska
• Languages of publication: EN

Abstracts

EN

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterisation included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidising and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of the investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton.

Keywords

EN

68.55.-a

Discipline

• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 102
• Issue: 2
• Pages: 283-288

Dates

published

2002-08

received

2001-09-23

Contributors

author

W. Wierzchowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

K. Wieteska

• Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

author

W. Graeff

• HASYLAB at DESY, Notkestraße 85, 22603 Hamburg, Germany

author

A. Brzozowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

E. Nossarzewska-Orłowska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

References

• 1. T. Yonehara, K. Sakaguchi, N. Sato, Appl. Phys. Lett., 64, 2108, 1994
• 2. N. Sato, K. Sakagguchi, K. Yamaguta, Y. Fujiyama, T. Yonchara, in: Proc. 7th Int. Symp. on Si Mater. Science and Technology Semiconductor Si, PV94-10, 1994, p. 443
• 3. K. Barla, G. Bomchil, R. Herino, J.C. Pfister, J. Baruchel, J. Cryst. Growth, 68, 721, 1984
• 4. C. Faivre, D. Bellet, J. Appl. Crystallogr., 32, 1134, 1999
• 5. J. Salonen, M. Bjorkvist, E. Laua, J. Appl. Crystallogr., 33, 505, 2000
• 6. G. Kowalski, J. Gronkowski, M. Moore, Z. Marcic, A. Nossarzewska-Orłowska, A. Brzozowski, Il Nuovo Cimento D, 19, 561, 1997
• 7. W.P. Maszara, B.-L. Jiang, A. Yamada, G.A. Rozgonyi, H. Baumgart, A.J.R. De Kock, J. Appl. Phys., 69, 257, 1991
• 8. I.L. Toriani, O. Teschke, M.U. Kleinke, Acta Crystallogr. A, 49, S370, 1993
• 9. K. Wieteska, W.K. Wierzchowski, W. Graeff, A. Nossarzewska-Orłowska, A. Brzozowski, Electron Technol., 31, 213, 1998
• 10. K. Wieteska, W.K. Wierzchowski, W. Graeff, A. Nossarzewska-Orłowska, A. Brzozowski, Universitatis Iagiellonicae Folia Physica, Fas., XXXXIX, 91, 1997

Identifiers

DOI

10.12693/APhysPolA.102.283