Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing

• Authors: D. Klinger , S. Kret , J. Auleytner , D. Żymierska
• Languages of publication: EN

Abstracts

EN

An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and then the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy.

Keywords

EN

61.72.Cc; 61.72.Ff; 61.72.Ji; 61.72.Nn; 61.80.Ba

Discipline

• 61.72.Cc: Kinetics of defect formation and annealing
• 61.80.Ba: Ultraviolet, visible, and infrared radiation effects (including laser radiation)
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
• 61.72.Nn: Stacking faults and other planar or extended defects

• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 102
• Issue: 2
• Pages: 259-264

Dates

published

2002-08

received

2001-09-23

Contributors

author

D. Klinger

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

S. Kret

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Auleytner

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

D. Żymierska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.102.259