Study of Si-Implanted and Thermally Annealed Layers of Silicon by Using X-ray Grazing Incidence Methods

• Authors: D. Klinger , M. Lefeld-Sosnowska , J. Pełka , W. Paszkowicz , P. Gierłowski , P. Pankowski
• Languages of publication: EN

Abstracts

EN

This paper reports on the study of structural modifications induced by the implantation process and by the subsequent thermal annealing in near-surface layers of Si single crystals implanted with Si^{2+} ions of energy 140 keV and doses from 1×10^{15} to 1× 10^{16} ions/cm^2. The grazing incidence X-ray diffraction and X-ray reflectivity measurements were applied to determine the thickness and structural composition of the damaged layers. The fitted electron density profiles indicated an existence of an interfacial layer with density higher than the density of Si matrix or near-surface oxide layer. Formation of polycrystalline phases of silicon and silicon oxides is discussed in dependence on the conditions of annealing treatment and implantation dose.

Keywords

EN

61.10.-i; 61.10.Kw; 61.72.Tt; 68.35.Fx; 81.40.Ef; 81.65.Mq

Discipline

• 81.40.Ef: Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
• 81.65.Mq: Oxidation(see also 64.75.Lm Phase separation and segregation in oxidation)
• 68.35.Fx: Diffusion; interface formation(see also 66.30.-h Diffusion in solids, for diffusion of adsorbates, see 68.43.Jk)

• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 101
• Issue: 5
• Pages: 795-801

Dates

published

2002-05

received

2001-08-31

Contributors

author

D. Klinger

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Lefeld-Sosnowska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

J. Pełka

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Paszkowicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Gierłowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Pankowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. T.A. Rabadeau, I.M. Tidswell, P.S. Pershan, J. Bevk, B.S. Freer, Appl. Phys. Lett., 59, 706, 1991
• 2. T.A. Rabadeau, I.M. Tidswell, P.S. Pershan, J. Bevk, B.S. Freer, Appl. Phys. Lett., 59, 422, 1991
• 3. S.D. Kosovsky, P.S. Pershan, K.S. Krish, J. Bevk, M.L. Green, D. Brasen, L.C. Feldman, P.K. Roy, Appl. Phys. Lett., 70, 3119, 1997
• 4. Handbook of Ion Implantation Technology, Ed. J.F. Ziegler, IBM-Research Yorktown Heights, New York 1992, p. 203
• 5. O.W. Holland, D.S. Zhou, D.K. Thomas, Appl. Phys. Lett., 63, 896, 1993
• 6. H.L. Meng, S. Prussin, M.E. Law, K.S. Jones, J. Appl. Phys., 73, 955, 1993
• 7. E.J. Jaquez, T.L. Alford, N.D. Theodore, D. Adams, Li Jian, S.W. Russell, S. Anders, in: Thermodynamics and Kinetics of Phase Transformations, Symposium, Eds. J.S. Im, B. Park, A.L. Greer, G.B. Stephenson, Mater. Res. Soc., Pittsburgh, PA 1996, p. 189
• 8. S. Ellingboe, M.C. Ridgway, P.J. Schultz, J. Appl. Phys., 73, 1133, 1993
• 9. Xianfang Zhu, J.S. Williams, J.C. McCallum, Nucl. Instrum. Methods Phys. Res. B, 148, 268, 1999
• 10. L.G. Parratt, Phys. Rev., 59, 359, 1954

Identifiers

DOI

10.12693/APhysPolA.101.795