Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed

• Authors: D. Żymierska , K. Godwod , J. Adamczewska , J. Auleytner , J. Choiński , K. Regiński
• Languages of publication: EN

Abstracts

EN

The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10^{14} ions· cm^{-2} dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.

Keywords

EN

61.80.Jh; 61.80.-x; 61.10.-i; 85.40.Ry

Discipline

• 85.40.Ry: Impurity doping, diffusion and ion implantation technology
• 61.80.-x: Physical radiation effects, radiation damage(for photochemical reactions, see 82.50.-m; for effects of ionizing radiation on biological systems, see 87.53.-j)
• 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)

• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 101
• Issue: 5
• Pages: 743-750

Dates

published

2002-05

received

2001-08-31

Contributors

author

D. Żymierska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Godwod

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Adamczewska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Auleytner

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Choiński

• Heavy Ion Laboratory of Warsaw University, Pasteura 5a, 02-093 Warsaw, Poland

author

K. Regiński

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. E.C.H. Silk, R.S. Barnes, Philos. Mag., 7, 970, 1959
• 2. R.L. Fleischer, P.B. Price, R.M. Walker, Nuclear Tracks in Solids, University of California Press, Berkeley 1975
• 3. C. Lehmann, Interaction of Radiation with Solids and Elementary Defects Production, North-Holland, Amsterdam 1977
• 4. E. Balanzat, Radiat. Effects Defects Solids, 126, 97, 1993
• 5. P. Sigmund, Nucl. Instrum. Methods, Phys. Res. B, 135, 1, 1998
• 6. R. Scholz, J. Vetter, S. Hoppe, Radiat. Effects Defects Solids, 126, 275, 1993
• 7. A. Dunlop, J. Henry, G. Jaskierowicz, Nucl. Instrum. Methods, Phys. Res. B, 146, 222, 1998
• 8. J. Auleytner, in: Defects in Crystals, Ed. E. Mizera, World Scientific, Singapore 1988, p. 46
• 9. J. Auleytner, J. Bąk-Misiuk, Z. Furmanik, M. Toulemonde, J. Vetter, Radiat. Effects Defects Solids, 115, 335, 1991
• 10. A. Barbu, J.C. Jousset, G. Martin, M. Toulemonde, Nouvelles des GANIL, 9, 16, 1985
• 11. J.N. Górecka, J. Auleytner, Phys. Status Solidi A, 137, 309, 1993
• 12. J. Auleytner, Nucl. Instrum. Methods, Phys. Res. B, 87, 124, 1994
• 13. J. Auleytner, D. Żymierska, J. Adamczewska, J. Domagała, J. Górecka, T. Czosnyka, L. Datsenko, V. Khrupa, Universitatis Iagellonicae Folia Physica, XXXIX, 75, 1998
• 14. L.I. Datsenko, J. Auleytner, A. Misiuk, V.P. Klad'ko, V.F. Machulin, J. Bąk-Misiuk, D. Żymierska, I.V. Antonova, V.M. Melnyk, V.P. Popov, T. Czosnyka, J. Choiński, Semicond. Phys., Quantum Electronics and Optoelectronics, 2, 56, 1999
• 15. D. Żymierska, J. Auleytner, K. Godwod, J. Domagała, L. Datsenko, J. Choiński, J Alloys Comp., 328, 237, 2001
• 16. Heavy Ion Laboratory Annual Reports, Warsaw University, Warsaw, 1993-1999
• 17. J.P. Biersack, L.G. Haggmark, Nucl. Instrum. Methods, 174, 257, 1980
• 18. E. Abramof, A.F. Beloto, M. Ueda, G.F. Gomes, L.A. Berni, H. Reuther, Nucl. Instrum. Methods, Phys. Res. B, 161-163, 1054, 2000

Identifiers

DOI

10.12693/APhysPolA.101.743