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2002 | 101 | 5 | 743-750
Article title

Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed

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EN
Abstracts
EN
The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10^{14} ions· cm^{-2} dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.
Keywords
Year
Volume
101
Issue
5
Pages
743-750
Physical description
Dates
published
2002-05
received
2001-08-31
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv101n519kz
Identifiers
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