Interference Fringes in the Plane Wave Topographic Images of Growth Bands in Si:Ge

• Authors: K. Wieteska , W. Wierzchowski , W. Graeff , M. Lefeld-Sosnowska , M. Regulska
• Languages of publication: EN

Abstracts

EN

An Si:Ge crystal with approximately 3% of germanium was studied with strongly collimated short-wavelength monochromatic synchrotron beam (beamline E2 at HASYLAB). The topographs obtained in the asymmetric 224 reflection revealed the presence of interference fringes related to growth bands caused by segregation of germanium. The fringes, observed for the first time, were strongly dependent on the angular setting and it was possible to distinguish at least three systems of fringes. A number of features of the existing strain field, which may be important for the formation of the fringes, was determined using other topographic methods, especially the Bragg-case section topography.

Keywords

EN

61.72.Ff

Discipline

• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 101
• Issue: 5
• Pages: 729-734

Dates

published

2002-05

received

2001-08-31

Contributors

author

K. Wieteska

• Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

W. Graeff

• HASYLAB at DESY, Notkestrasse 85, 22603 Hamburg, Germany

author

M. Lefeld-Sosnowska

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

M. Regulska

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.101.729