Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure

• Authors: A. Misiuk , J. Bąk-Misiuk , L. Bryja , J. Kątcki , J. Ratajczak , J. Jun , B. Surma
• Languages of publication: EN

Abstracts

EN

Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O^+ dose, D, within the 6×10^{17}-2×10^{18} cm^{-2} range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10^{17} cm^{-2}). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.

Keywords

EN

61.10.-i; 61.72.Yx; 81.40.Vw

Discipline

• 81.40.Vw: Pressure treatment(see also 62.50.-p High-pressure effects in solids and liquids; 61.50.Ks Crystallographic aspects of phase transformations; pressure effects; for pressure effects on superconducting transition temperature, see 74.62.Fj)
• 61.72.Yx: Interaction between different crystal defects; gettering effect(for magnetic impurity interactions, see 75.30.Hx)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 101
• Issue: 5
• Pages: 719-727

Dates

published

2002-05

received

2001-08-31

Contributors

author

A. Misiuk

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Bąk-Misiuk

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

L. Bryja

• Wrocław University of Technology, Wyb. Wyspiańskiego 27, 53-370 Wrocław, Poland

author

J. Kątcki

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Ratajczak

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Jun

• High Pressure Research Centre, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

B. Surma

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.101.719