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2002 | 101 | 5 | 719-727
Article title

Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure

Content
Title variants
Languages of publication
EN
Abstracts
EN
Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O^+ dose, D, within the 6×10^{17}-2×10^{18} cm^{-2} range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10^{17} cm^{-2}). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
Keywords
EN
Year
Volume
101
Issue
5
Pages
719-727
Physical description
Dates
published
2002-05
received
2001-08-31
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv101n516kz
Identifiers
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