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2001 | 100 | 5 | 585-602
Article title

Dopants in Semiconductors Studied by Perturbed Angular Correlation

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Abstracts
EN
Theγ-γ perturbed angular correlation technique is a very powerful tool for the investigation of dopant incorporation and damage recovery after implantation in semiconductors. The basic principles of the technique will be introduced followed by a discussion of its strengths and limitations. Examples of its application will be given, ranging from cavities in silicon, effects of uniaxial stress on acceptor-donor pairs in silicon to damage recovery in nitride semiconductors like GaN.
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author
  • Institut für Strahlen- und Kernphysik der Universität Bonn, 53115 Bonn, Germany
author
  • Institut für Strahlen- und Kernphysik der Universität Bonn, 53115 Bonn, Germany
author
  • Institut für Strahlen- und Kernphysik der Universität Bonn, 53115 Bonn, Germany
author
  • Institut für Strahlen- und Kernphysik der Universität Bonn, 53115 Bonn, Germany
author
  • Institut für Strahlen- und Kernphysik der Universität Bonn, 53115 Bonn, Germany
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Document Type
Publication order reference
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bwmeta1.element.bwnjournal-article-appv100n519kz
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