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2001 | 100 | 5 | 737-742
Article title

Surface Concentration of Defects at Grain Boundaries in Sintered Alumina Determined by Positron Annihilation Lifetime Spectroscopy

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EN
Abstracts
EN
Sintered alumina samples of grain diameters spanning from 1.2 to 4.5μm have been investigated by positron annihilation lifetime spectroscopy. One series of samples was produced from material containing about 150 ppm impurities (mainly SiO_2). The second one was made from material having about 2700 ppm of various elements (SiO_2, MgO, CaO). Two models of positron trapping at grain boundaries are compared: The first one relates to the diffusion-limited regime; and the other one - to the transition-limited regime of trapping. As a result the relative change of surface concentration of defects at grain boundaries is determined. Additionally, the positron diffusion constant in bulk alumina at room temperature, D_+=0.36±10 cm^2/s, is estimated.
Keywords
EN
Contributors
author
  • Institute of Physics and Chemistry of Metals, Silesian University, Bankowa 12, 40-007 Katowice, Poland
author
  • Laboratoire Matériaux et Microélectronique de Provence, (U.M.R./CNRS nº 6137), Faculté des Sciences de St. Jérôme, Case 222, 13397 Marseille Cedex 20, France
author
  • Laboratoire Matériaux et Microélectronique de Provence, (U.M.R./CNRS nº 6137), Faculté des Sciences de St. Jérôme, Case 222, 13397 Marseille Cedex 20, France
  • Ecole Nationale Supérieure des Mines de Saint-Etienne, Département Céramiques Spéciales, 42023 Saint-Etienne Cedex 2, France
author
  • Laboratoire Matériaux et Microélectronique de Provence, (U.M.R./CNRS nº 6137), Faculté des Sciences de St. Jérôme, Case 222, 13397 Marseille Cedex 20, France
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv100n503kz
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