Dynamics of Photoexcited Carriers in GaInAs/GaAs Quantum Dots

• Authors: E. Ilczuk , K. Korona , A. Babiński , J. Kuhl
• Languages of publication: EN

Abstracts

EN

We present photocurrent and time-resolved photoluminescence investigations of AlGaAs/GaInAs/GaAs structures containing GaInAs/GaAs self-assembled quantum dots. The high electrical field in those devices significantly influences carrier dynamics. The photocurrent spectra show a double peak with maxima at 1.40 and 1.47 eV (at 80 K). These maxima are due to the GaInAs wetting layer (higher) and the quantum dots (lower). The photoluminescence spectra comprise weak excitonic luminescence from GaAs at 1.504 eV (at 80 K) and stronger and broad emission from the Ga_{0.4}In_{0.6}As quantum dots. At 300 K, the quantum dots emission has a lifetime of 1.1 ns and has a maximum at an energy of 1.38 eV. By analysis of both experiments, we can separate the influence of different radiative and nonradiative recombination processes. So, the tunneling rate: r_T=0.5 ns^{-1} and the radiative recombination rate in the quantum dots: r_{RQD}=0.4 ns^{-1} have been determined. The high tunneling probability (due to the influence of the built-in electric field) reveals that the tunneling effect is important for the recombination and transport processes in our structures.

Keywords

EN

72.40.+w; 78.47.+p; 78.67.-n

Discipline

• 78.67.-n: Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures(for magnetic properties of nanostructures, see 75.75.-c; for electronic transport in nanoscale structures, see 73.63.-b; for mechanical properties of nanoscale systems, see 62.25.-g)
• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2001
• Volume: 100
• Issue: 3
• Pages: 379-386

Dates

published

2001-09

received

2001-06-01

Contributors

author

E. Ilczuk

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

K. Korona

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

A. Babiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

J. Kuhl

• MPI für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany

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Identifiers

DOI

10.12693/APhysPolA.100.379