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Abstracts
We report on molecular beam epitaxy of CdSe/CdMgSe heterostructures on InAs(001) substrates and studies of their optical and structural properties. The CdMgSe energy gap versus composition dependence is determined. The zinc-blende MgSe band-gap energy and optical bowing parameter are estimated to be 4.05 eV and 0.2 eV, respectively. The CdSe quantum wells embedded into CdMgSe barriers demonstrate intense photoluminescence. Effective mass approximation calculations of electron-heavy hole optical transitions in CdSe quantum well are in a good agreement with the experimental data obtained.
Keywords
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Year
Volume
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Pages
443-450
Physical description
Dates
published
2001-09
received
2001-06-01
Contributors
author
- St. Petersburg Electrotechnical University, Prof. Popov 5, St. Petersburg 197376, Russia
author
- St. Petersburg Electrotechnical University, Prof. Popov 5, St. Petersburg 197376, Russia
author
- Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
- Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
- Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
- Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
- Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
- Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv100n315kz