Preferences help
enabled [disable] Abstract
Number of results
2001 | 100 | 3 | 443-450
Article title

Cd(Mg)Se Single Layers and CdSe/CdMgSe Heterostructures Grown by Molecular Beam Epitaxy on InAs(001) Substrates

Title variants
Languages of publication
We report on molecular beam epitaxy of CdSe/CdMgSe heterostructures on InAs(001) substrates and studies of their optical and structural properties. The CdMgSe energy gap versus composition dependence is determined. The zinc-blende MgSe band-gap energy and optical bowing parameter are estimated to be 4.05 eV and 0.2 eV, respectively. The CdSe quantum wells embedded into CdMgSe barriers demonstrate intense photoluminescence. Effective mass approximation calculations of electron-heavy hole optical transitions in CdSe quantum well are in a good agreement with the experimental data obtained.
Physical description
  • 1. S.V. Ivanov, V.A. Solovév, K.D. Moiseev, I.V. Sedova, Ya.V. Terentév, A.A. Toropov, B.Ya. Meltzer, M.P. Mikhailova, Yu.P. Yakovlev, P.S. Kopév, Appl. Phys. Lett., 78, 1655, 2001
  • 2. S.V. Ivanov, A.A. Toropov, T.V. Shubina, S.V. Sorokin, A.V. Lebedev, I.V. Sedova, P.S. Kopév, G.R. Pozina, J.P. Bergman, B. Monemar, J. Appl. Phys., 83, 3168, 1998
  • 3. F. Firszt, S. Łęgowski, H. Męczyńska, J. Szatkowski, W. Paszkowicz, M. Marczak, J. Cryst. Growth, 184/185, 1053, 1998
  • 4. A. Ohtake, T. Hanada, K. Arai, T. Komura, S. Miwa, K. Kimura, T. Yasuda, C. Jin, T. Yao, J. Crystal Growth, 201/202, 490, 1999
  • 5. J.M. Gaines, J. Peruzzello, B. Greenberg, J. Appl. Phys., 73, 2835, 1992
  • 6. V.A. Kaygorodov, I.V. Sedova, S.V. Sorokin, O.V. Nekrutkina, T.V. Shubina, A.A. Toropov, S.V. Ivanov, Abstracts of 10th Int. Conf. on II-VI Compounds, Bremen 2001, to be presented
  • 7. J. Gutowski, P. Baume, K. Hauke, in: Properties of Wide Bandgap II-VI Semiconductors, Ed. R. Bargava, Inspec IEE, London 1997, p. 37
  • 8. C.G. Van de Walle, Phys. Rev. B, 39, 1871, 1989
  • 9. N. Samarth, H. Luo, J.K. Furdyna, S.B. Qadri, Y.R. Lee, A.K. Ramdas, N. Otsuka, Appl. Phys. Lett., 54, 2680, 1989
  • 10. H. Okuyama, K. Nakato, T. Miyajima, K. Akimoto, Jpn. J. Appl. Phys. 2, 30, L1620, 1991
  • 11. W.H. Strehlow, E.L. Cook, J. Phys. Chem. Ref. Data, 2, 163, 1973
  • 12. M.Th. Litz, K. Watanabe, M. Korn, H. Ress, U. Lunz, W. Ossau, A. Waag, G. Landwehr, Th. Walter, B. Neubauer, D. Gerthsen, U. Shussler, J. Cryst. Growth, 159, 54, 1996
  • 13. V. Pelegrini, R. Atamasov, A. Tredicucci, F. Beltram, C. Amzulini, L. Sobra, L. Vanzetti, A. Francioso, Phys. Rev. B, 51, 5171, 1995
  • 14. S.-H. Wei, A. Zunger, Appl. Phys. Lett., 72, 2011, 1998
  • 15. M.W. Wang, J.F. Swenberg, M.C. Phillips, E.T. Yu, J.O. McCaldin, R.W. Grant, T.C. McGill, Appl. Phys. Lett., 64, 3455, 1994
  • 16. M.V. Maximov, I.L. Krestnikov, S.V. Ivanov, N.N. Ledenzov, S.V. Sorokin, Semiconductors, 31, 939, 1997
  • 17. V.S. Sorokin, S.V. Sorokin, V.A. Kaygorodov, S.V. Ivanov, J. Cryst. Growth, 214/215, 130, 2000
  • 18. H.J. Lozykowski, V.K. Shastri, J. Appl. Phys., 69, 3235, 1991
Document Type
Publication order reference
YADDA identifier
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.