Cd(Mg)Se Single Layers and CdSe/CdMgSe Heterostructures Grown by Molecular Beam Epitaxy on InAs(001) Substrates

• Authors: V. Kaygorodov , V. Sorokin , I. Sedova , O. Nekrutkina , S. Sorokin , T. Shubina , A. Toropov , S. Ivanov
• Languages of publication: EN

Abstracts

EN

We report on molecular beam epitaxy of CdSe/CdMgSe heterostructures on InAs(001) substrates and studies of their optical and structural properties. The CdMgSe energy gap versus composition dependence is determined. The zinc-blende MgSe band-gap energy and optical bowing parameter are estimated to be 4.05 eV and 0.2 eV, respectively. The CdSe quantum wells embedded into CdMgSe barriers demonstrate intense photoluminescence. Effective mass approximation calculations of electron-heavy hole optical transitions in CdSe quantum well are in a good agreement with the experimental data obtained.

Keywords

EN

78.66.Hf

Discipline

• 78.66.Hf: II-VI semiconductors

• Journal: Acta Physica Polonica A
• Year: 2001
• Volume: 100
• Issue: 3
• Pages: 443-450

Dates

published

2001-09

received

2001-06-01

Contributors

author

V. Kaygorodov

• St. Petersburg Electrotechnical University, Prof. Popov 5, St. Petersburg 197376, Russia

author

V. Sorokin

• St. Petersburg Electrotechnical University, Prof. Popov 5, St. Petersburg 197376, Russia

author

I. Sedova

• Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

O. Nekrutkina

• Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

S. Sorokin

• Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

T. Shubina

• Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

A. Toropov

• Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

S. Ivanov

• Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

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Identifiers

DOI

10.12693/APhysPolA.100.443